(China (Mainland))
Product Summary
The K6F8016V3A-TF55 is fabricated by SAMSUNGs advanced full CMOS process technology. The families support various operating temperature ranges. The families also support low data retention voltage for battery back-up operation with low data retention current.
Parametrics
Absolute maximum ratings:(1)Voltage on any pin relative to Vss VIN,VOUT: -0.2 to VCC+0.3V(max.4.0V) V; (2)Voltage on Vcc supply relative to Vss VCC: -0.2 to 4.0 V; (3)Power Dissipation PD: 1.0 W; (4)Storage temperature, TSTG: -65 to 150℃; (5)Operating Temperature, TA: -40 to 85℃.
Features
Features: (1)Process Technology: Full CMOS; (2)Organization: 512K x16; (3)Power Supply Voltage: 3.0 to 3.6V; (4)Low Data Retention Voltage: 1.5V(Min); (5)Three State Outputs; (6)Package Type: 44-TSOP2-400F/R.
Diagrams
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 K6F8016R6B |
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K6F8016R6D |
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Negotiable |
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K6F8016T6C |
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Negotiable |
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K6F8016U6B |
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Negotiable |
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K6F8016U6C |
Other |
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Negotiable |
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K6F8016U6D |
Other |
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Negotiable |
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