(China (Mainland))
Product Summary
The MG150J2YS1 is a Silicon N Channel IGBT. It is suitable for high power switching applications and motor control applications.
Parametrics
MG150J2YS1 absolute maximum ratings: (1)Collector-emitter voltage, VCES: 600 V; (2)Gate-emitter voltage, VGES: ±20 V; (3)Collector current, DC, IC: 150A; 1ms, ICP: 300A; (4)Forward current, DC, IF: 150A; 1ms, IFM: 300A; (5)Collector power dissipation (Tc = 25℃), PC: 780 W; (6)Junction temperature, Tj: 150℃; (7)Storage temperature range, Tstg: -40 to 125℃; (8)Isolation voltage, VIsol: 2500V; (9)Screw torque (Terminal / mounting): -3/3 Nm.
Features
MG150J2YS1 features: (1)The electrodes are isolated from case; (2)High input impedance; (3)Includes a complete half bridge in one package; (4)Enhancement-mode; (5)High speed; (6)Low saturation voltage.
Diagrams
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