(China (Mainland))
Product Summary
The K6T4008C1B-GB55 is fabricated by SAMSUNGs advanced CMOS process technology. This product support various operating temperature ranges and various package types for user flexibility of system design. The device also support low data retention voltage for battery back-up operation with low data retention current.
Parametrics
Absolute maximum ratings:(1)Voltage on any pin relative to Vss, VIN,VOUT: -0.5 to 7.0V; (2)Voltage on Vcc supply relative to Vss, VCC: -0.5 to 7.0V; (3)Power Dissipation, PD: 1.0W; (4)Storage temperature, TSTG: -65 to 150℃ ; (5)Operating Temperature, TA: 0 to 70℃; (6)Soldering temperature and time, TSOLDER: 260℃, 10sec(Lead Only).
Features
Features:(1)Process Technology: TFT; (2)Organization: 512Kx8; (3)Power Supply Voltage: 4.5~5.5V; (4)Low Data Retention Voltage: 2V(Min); (5)Three state output and TTL Compatible; (6)Package Type: 32-DIP-600, 32-SOP-525, 32-TSOP2-400F/R.
Diagrams
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 K6T4008C1B |
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K6T4008U1C-B |
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K6T4008U1C-F |
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K6T4008V1C-B |
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K6T4008V1C-F |
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Negotiable |
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K6T4016U3C |
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Negotiable |
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